Vertically Coupled Microdisk Resonators Using AlGaAs/AlOx Technology - LAAS - Laboratoire d'Analyse et d'Architecture des Systèmes
Article Dans Une Revue IEEE Photonics Technology Letters Année : 2015

Vertically Coupled Microdisk Resonators Using AlGaAs/AlOx Technology

Résumé

In this letter, we report the first experimental demonstration of micro-disk resonators that are vertically-coupled to their buried access waveguides on III-V semiconductor epitaxial structures using an original fabrication process. The here-proposed and validated three-dimensional integration scheme exploits selective lateral thermal oxidation of aluminium-rich AlGaAs layers. Compared to the previously reported processing techniques, this new scheme is simpler as it does not require any planarization or substrate transfer steps. As a proof-of-principle demonstration of this approach, 250 µm-diameter micro-disk devices exhibiting quality factor reaching ~8500 have been successfully fabricated.
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Dates et versions

hal-01612502 , version 1 (06-10-2017)

Identifiants

Citer

Stéphane Calvez, Gael Lafleur, Alexandre Larrue, Pierre-François Calmon, Alexandre Arnoult, et al.. Vertically Coupled Microdisk Resonators Using AlGaAs/AlOx Technology. IEEE Photonics Technology Letters, 2015, 27 (9), pp.982 - 985. ⟨10.1109/LPT.2015.2405031⟩. ⟨hal-01612502⟩
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