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Journal Articles Microelectronics Reliability Year : 2017

New triggering-speed-characterization method for diode-triggered SCR using TLP

Abstract

The key parameters in the optimization of the Diode Triggered Silicon-Controlled Rectifier (DTSCR) as a RF ESD protection, are the turn-on time and the trigger-voltage overshoots seen before the SCR turns on, during very fast ESD transients [1]. But at this time, there is no normalized method to evaluate and report the ESD device turn-on speed [2]. Such a method would be required to effectively compare device performance. In this work a new method , based on stored-charge, is investigated to characterize the triggering speed of DTSCR using Transmission Line Pulsing (TLP) measurements.
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Dates and versions

hal-01643028 , version 1 (21-11-2017)

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Mouna Mahane, David Trémouilles, Marise Bafleur, Benjamin Thon, Marianne Diatta, et al.. New triggering-speed-characterization method for diode-triggered SCR using TLP. Microelectronics Reliability, 2017, 76-77, pp.692 - 697. ⟨10.1016/j.microrel.2017.07.063⟩. ⟨hal-01643028⟩
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