New triggering-speed-characterization method for diode-triggered SCR using TLP
Abstract
The key parameters in the optimization of the Diode Triggered Silicon-Controlled Rectifier (DTSCR) as a RF ESD protection, are the turn-on time and the trigger-voltage overshoots seen before the SCR turns on, during very fast ESD transients [1]. But at this time, there is no normalized method to evaluate and report the ESD device turn-on speed [2]. Such a method would be required to effectively compare device performance. In this work a new method , based on stored-charge, is investigated to characterize the triggering speed of DTSCR using Transmission Line Pulsing (TLP) measurements.
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Mahane et al. - 2017 - New triggering-speed-characterization method for d.pdf (1.94 Mo)
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