Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation
Résumé
The purpose of this paper is to present an extensive study of three 1200 V silicon carbide (SiC) Power MOSFETs in non-destructive, but leading to degradations, short-circuit operation. Unusually, as compared with equivalent device built on silicon, the damage signature is a significant gate current increase but the components are still functional. In order to find the damage location, non-destructive and destructive methods have been carried out. The results converge to a local gate oxide breakdown caused by the important electrical and thermal stress during short-circuit operation leading to different failure mechanisms depending on the device design.
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Boige et al. - 2017 - Investigation on damaged planar-oxide of 1200V SiC.pdf (2.65 Mo)
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