Mass patterning of polysiloxane layers using spin coating and photolithography techniques - LAAS - Laboratoire d'Analyse et d'Architecture des Systèmes
Article Dans Une Revue Microelectronics Journal Année : 2006

Mass patterning of polysiloxane layers using spin coating and photolithography techniques

Résumé

Polysiloxane (PSX) containing 2,2-dimethoxy-2-phenylacetophenone (DMPA) photoinitiator has been used as a photosensitive polymer. Thus, thin PSX films have been deposited by spin coating and patterned thanks to standard ultraviolet (UV) photolithography. The influences of the different technological parameters (PSX dilution, spin speed, UV exposure time) have been studied in so as to understand the polysiloxane deposition and cross-linking phenomena. Finally, the whole process has been optimised. Results evidence the realisation of high quality PSX patterns for the development of mass-fabricated ion sensitive layers in the field of chemical microsensors.
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Dates et versions

hal-01687870 , version 1 (14-04-2018)

Identifiants

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Benoit Torbiero, Marie Laure L Pourciel-Gouzy, Iryna Humenyuk, Jean-Baptiste Doucet, Augustin Martinez, et al.. Mass patterning of polysiloxane layers using spin coating and photolithography techniques. Microelectronics Journal, 2006, 37 (2), pp.133 - 136. ⟨10.1016/j.mejo.2005.04.054⟩. ⟨hal-01687870⟩
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