InSb Nanowires with Built-In Ga x In 1– x Sb Tunnel Barriers for Majorana Devices - LAAS - Laboratoire d'Analyse et d'Architecture des Systèmes Access content directly
Journal Articles Nano Letters Year : 2017

InSb Nanowires with Built-In Ga x In 1– x Sb Tunnel Barriers for Majorana Devices

Abstract

Majorana zero modes (MZMs), prime candi dates for topological quantum bits, are detected as zero bias conductance peaks (ZBPs) in tunneling spectroscopy measurements. Implementation of a narrow and high tunnel barrier in the next generation of Majorana devices can help to achieve the theoretical ly predicted quantized height of the ZBP . W e propose a material - oriented approach to engineer a sharp and narrow tunnel barrier by synthesizing a thin axial segment of Ga x In 1 - x Sb within an InSb nanowire. By varying the precursor molar fraction and the grow th time, we accurately control the composition and the length of the barriers. The height and the width of the Ga x In 1 - x Sb tunnel barrier are extracted from the Wentzel - Kramers - Brillouin ( WKB ) - fits to the experimental I - V traces

Dates and versions

hal-01713062 , version 1 (20-02-2018)

Identifiers

Cite

Diana Car, Sonia Conesa-Boj, Hao Zhang, Roy Op Het Veld, Michiel de Moor, et al.. InSb Nanowires with Built-In Ga x In 1– x Sb Tunnel Barriers for Majorana Devices. Nano Letters, 2017, 17 (2), pp.721 - 727. ⟨10.1021/acs.nanolett.6b03835⟩. ⟨hal-01713062⟩
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