%0 Journal Article %T Twin-Induced InSb Nanosails: A Convenient High Mobility Quantum System %+ Catalan Institute of Nanoscience and Nanotechnology (ICN2) %+ Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 (IEMN-DOAE) %+ Materials Research and Technology (MRT) Department %+ Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN) %+ Laboratorio de Microscopias Avanzadas %+ Institució Catalana de Recerca i Estudis Avançats (ICREA) %+ Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering %A de La Mata, María %A Leturcq, Renaud %A Plissard, S.R. %A Rolland, Chloé %A Magen, Cesar %A Arbiol, Jordi %A Caroff, Philippe %< avec comité de lecture %Z Rapport LAAS n° 16625 %@ 1530-6984 %J Nano Letters %I American Chemical Society %V 16 %N 2 %P 825 - 833 %8 2016-02 %D 2016 %R 10.1021/acs.nanolett.5b05125 %Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] %Z Physics [physics]/Quantum Physics [quant-ph] %Z Chemical Sciences/Cristallography %Z Chemical Sciences/Material chemistryJournal articles %X Ultra narrow bandgap III–V semiconductor nanomaterials provide a unique platform for realizing advanced nanoelectronics, thermoelectrics, infrared photodetection, and quantum transport physics. In this work we employ molecular beam epitaxy to synthesize novel nanosheet-like InSb nanostructures exhibiting superior electronic performance. Through careful morphological and crystallographic characterization we show how this unique geometry is the result of a single twinning event in an otherwise pure zinc blende structure. Four-terminal electrical measurements performed in both the Hall and van der Pauw configurations reveal a room temperature electron mobility greater than 12 000 cm2·V–1·s–1. Quantized conductance in a quantum point contact processed with a split-gate configuration is also demonstrated. We thus introduce InSb “nanosails” as a versatile and convenient platform for realizing new device and physics experiments with a strong interplay between electronic and spin degrees of freedom. %G English %L hal-01713072 %U https://hal.laas.fr/hal-01713072 %~ UNIV-TLSE2 %~ UNIV-TLSE3 %~ CNRS %~ UNIV-VALENCIENNES %~ INSA-TOULOUSE %~ LAAS %~ IEMN %~ UT1-CAPITOLE %~ LAAS-MPN %~ LAAS-MICRO-NANO-BIO-TECHNOLOGIES %~ UNIV-LILLE %~ INSA-GROUPE %~ TOULOUSE-INP %~ UNIV-UT3 %~ UT3-INP %~ UT3-TOULOUSEINP