During the last decade, a considerable diversification of the possible MOS device architectures for future nodes has occurred. They range from planar Fully-Depleted (FD)-SOI transistors, to 3D multigate FinFETs or gate-all-around nanowire (NW)-FETs. Within this context, the reduction of the source/drain contact resistance (R C) is a particularly critical challenge. R C strongly depends on the active dopant concentration at the semiconductor/silicide interface. It is therefore essential that electrical activation and mobility at different depths within a device are reliably determined. Hall Effect is an effective method to measure the active dose, together with the sheet resistance and the carrier mobility. However, the measured values are averaged over the entire active layer thickness. In contrast, the Differential Hall Effect method (DHE) can solve this problem, as it can provide an accurate profile of the previous three physical parameters as a function of depth with nm resolution. This technique relies on the iteration of oxidation/etch cycles based either on anodic or native oxidation processes. DHE has been successfully demonstrated for both Si and Ge materials; however its application to SiGe alloys is far more challenging due to the different oxidation rates of these two species. Considering the technological interest for SiGe, which is today the material of choice for p-MOS source/drain regions, it is therefore important to develop a reliable DHE method for this material. In this work, we have developed a SiGe chemical etching process based on the NH4OH:H2O2:H2O solution (SC1). The SC1 removes the issue of silicon selectivity over germanium during SiGe oxidation as it reacts simultaneously with both semiconductors. In particular, our study is focused on boron-doped strained Si 1-x Ge x shallow layers (0.2