Joule heated metallic microwire devices for sub-microsecond T-jump experiments - LAAS - Laboratoire d'Analyse et d'Architecture des Systèmes Access content directly
Journal Articles Microelectronics Journal Year : 2015

Joule heated metallic microwire devices for sub-microsecond T-jump experiments

Abstract

We report a study of the transient heating response of submicrometric gold wires on oxidized Si substrates, highlighting their potential as versatile platforms for creating fast temperature variations (T-jumps). To characterize electrically the transient heating response, we developed an original differential resistance setup that excites single wires with current pulses and provides a signal proportional to the ΔT induced. A reproducible sub-microsecond transient heating response (for ΔT≤80 °C) was observed for the heaters, regardless the substrate temperature or the presence of a thermal load (polymer film) on the surface. We also developed a simplified mathematical model that reproduced the main experimental observations and provided valuable insights into the dynamics and stability of the heating process. As a proof of concept, our electrical setup was also coupled to a time-resolved optical microscopy setup to detect the transient thermal response of a well-known luminescent thermometer molecule (Rhodamine B).
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Dates and versions

hal-01764284 , version 1 (11-04-2018)

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Carlos M. Quintero, Olena Kraieva, Franck Carcenac, Denis Lagrange, Nina Yaremchuk, et al.. Joule heated metallic microwire devices for sub-microsecond T-jump experiments. Microelectronics Journal, 2015, 46 (12), pp.1167 - 1174. ⟨10.1016/j.mejo.2015.06.024⟩. ⟨hal-01764284⟩
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