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Journal Articles Review of Scientific Instruments Year : 2018

Scanning microwave microscopy applied to semiconducting GaAs structures

Abstract

A calibration algorithm based on one-port vector network analyzer (VNA) calibration for scanning microwave microscopes (SMMs) is presented and used to extract quantitative carrier densities from a semiconducting n-doped GaAs multilayer sample. This robust and versatile algorithm is instrument and frequency independent, as we demonstrate by analyzing experimental data from two different, cantilever- and tuning fork-based, microscope setups operating in a wide frequency range up to 27.5 GHz. To benchmark the SMM results, comparison with secondary ion mass spectrometry is undertaken. Furthermore, we show SMM data on a GaAs p-n junction distinguishing p- and n-doped layers.
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Dates and versions

hal-01780256 , version 1 (27-04-2018)

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Arne Buchter, Johannes Hoffmann, Alexandra Delvallée, Enrico Brinciotti, Dimitri Hapiuk, et al.. Scanning microwave microscopy applied to semiconducting GaAs structures. Review of Scientific Instruments, 2018, 89 (2), pp.023704. ⟨10.1063/1.5015966⟩. ⟨hal-01780256⟩
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