Design, realization and characterization of silicon nanowire ion sensitive field effect transistors - LAAS - Laboratoire d'Analyse et d'Architecture des Systèmes Access content directly
Conference Papers Year : 2016

Design, realization and characterization of silicon nanowire ion sensitive field effect transistors

Abstract

The aim of our research project is to achieve a potentiometric multi-sensor platform, consisting of ion sensitive field effect transistors ISFET and MOSFET, which channel is a nanowire or a network of horizontal Silicon nanowires and whose gate insulator is alumina Al2O3 deposed by Atomic Layer deposition ALD. This microdevice will provide chemical and biological analyses in the liquid phase, in microfluidic channels.
Fichier principal
Vignette du fichier
Abstract IEEE_NMDC_2016_Lale_vf.pdf (438.83 Ko) Télécharger le fichier
Origin : Files produced by the author(s)
Loading...

Dates and versions

hal-01871410 , version 1 (10-09-2018)

Identifiers

Cite

Ahmet Lale, Auriane Grappin, Emmanuel Scheid, Jérôme Launay, Pierre Temple-Boyer. Design, realization and characterization of silicon nanowire ion sensitive field effect transistors. IEEE Nanotechnology Materials and Devices Conference, IEEE NMDC 2016, Oct 2016, Toulouse, France. 2p., ⟨10.1109/NMDC.2016.7777159⟩. ⟨hal-01871410⟩
45 View
16 Download

Altmetric

Share

Gmail Facebook X LinkedIn More