Bismuth content dependence of the electron spin relaxation time in GaAsBi epilayers and quantum well structures - LAAS - Laboratoire d'Analyse et d'Architecture des Systèmes Access content directly
Journal Articles Semiconductor Science and Technology Year : 2018

Bismuth content dependence of the electron spin relaxation time in GaAsBi epilayers and quantum well structures

Thierry Amand
Chantal Fontaine

Abstract

Time-resolved optical orientation experiments have been performed in dilute bismide structures. Bulk layers with bismuth fractions in the range 1%–3.8% and quantum wells with bismuth fractions in the range 2.4%–7% were investigated. A clear decrease of the electron spin relaxation time is evidenced in both cases when the bismuth content increases. These results can be well interpreted by the increased efficiency of the spin relaxation mechanisms due to the bismuth induced larger spin-orbit interaction in these alloys.
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Dates and versions

hal-01944345 , version 1 (25-01-2019)

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Sawsen Azaizia, Andrea Balocchi, Simone Mazzucato, Fabian Cadiz, S Beato de Le Salle, et al.. Bismuth content dependence of the electron spin relaxation time in GaAsBi epilayers and quantum well structures. Semiconductor Science and Technology, 2018, 33 (11), pp.114013. ⟨10.1088/1361-6641/aae354⟩. ⟨hal-01944345⟩
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