Structural and optical properties of GaAsBi thin layers and quantum wells grown by molecular beam epitaxy (poster) - LAAS - Laboratoire d'Analyse et d'Architecture des Systèmes
Poster Année : 2014

Structural and optical properties of GaAsBi thin layers and quantum wells grown by molecular beam epitaxy (poster)

Chantal Fontaine
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hal-01947354 , version 1 (06-12-2018)

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  • HAL Id : hal-01947354 , version 1

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Hajer Makhloufi, Poonyasiri Boonpeng, Simone Mazzucato, Hélène Carrère, Tiantian Zhang, et al.. Structural and optical properties of GaAsBi thin layers and quantum wells grown by molecular beam epitaxy (poster). 18th International Conference on Molecular Beam Epitaxy, Sep 2014, Flagstaff, United States. 2014. ⟨hal-01947354⟩
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