Experimental and Theoretical Determination of Electron g- Factor in GaAsBi Alloys - LAAS - Laboratoire d'Analyse et d'Architecture des Systèmes Access content directly
Conference Papers Year : 2015

Experimental and Theoretical Determination of Electron g- Factor in GaAsBi Alloys

Chantal Fontaine
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hal-01947411 , version 1 (06-12-2018)

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  • HAL Id : hal-01947411 , version 1

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Hélène Carrère, Aurélien Kuck, Hajer Makhloufi, Poonyasiri Boonpeng, Alexandre Arnoult, et al.. Experimental and Theoretical Determination of Electron g- Factor in GaAsBi Alloys. 6th international workshop on bismuth−containing semiconductors, Prof. Susan Babcock, Jul 2015, Madison, United States. ⟨hal-01947411⟩
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