High frequency operation of an integrated electro-absorption modulator onto a VCSEL - LAAS - Laboratoire d'Analyse et d'Architecture des Systèmes
Article Dans Une Revue Journal of Physics: Photonics Année : 2019

High frequency operation of an integrated electro-absorption modulator onto a VCSEL

Résumé

We present in this paper the vertical integration of an electro-absorption modulator (EAM) onto a VCSEL. We discuss the design, fabrication, and measured characteristics of the combined VCSEL and EAM. We previously demonstrated a standalone EAM with an optical bandwidth around 30 GHz. In this paper we present for the first time an optical bandwidth of 30 GHz for an electro-absorption modulator integrated onto a VCSEL. This device exhibits single-mode operation and a very low chirp, below 0.1 nm, even with a modulation depth of 70 % which makes this device very competitive for high-speed communications in data centers.
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Dates et versions

hal-01968179 , version 1 (02-01-2019)

Identifiants

Citer

Ludovic Marigo-Lombart, Alexandre Rumeau, Christophe Viallon, Alexandre Arnoult, Stéphane Calvez, et al.. High frequency operation of an integrated electro-absorption modulator onto a VCSEL. Journal of Physics: Photonics, 2019, 1 (2), ⟨10.1088/2515-7647/aaf5af⟩. ⟨hal-01968179⟩
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