Physical origin of the gate current surge during short-circuit operation of SiC MOSFET
Résumé
During short-circuit of a vertical 4H-SiC power MOSFET, a high gate current starts to flow through the gate dielectric. We demonstrate that the Schottky emission is the main physical mechanisms.
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Boige et al. - 2019 - Physical origin of the gate current surge during s.pdf (1.37 Mo)
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| Origine | Accord explicite pour ce dépôt |
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