Optimization of a BiCMOS integrated tranducer for self-compensated capacitive pressure sensor - LAAS - Laboratoire d'Analyse et d'Architecture des Systèmes
Communication Dans Un Congrès Année : 1999

Optimization of a BiCMOS integrated tranducer for self-compensated capacitive pressure sensor

Résumé

Two new pressure sensor demonstrators have been designed and mounted using silicon/Pyrex capacitive sensing cells and analog-digital BiCMOS transducers. A ratiometric scheme has been used to self-compensate thermal drifts and nonlinearities. The first demonstrator implemented with four chips is characterized by a relative sensitivity close to-1.85%/bar, a nonlinearity in the order of 1.1%FS and an offset thermal coefficient smaller than 20 ppm/°C. The second one has been implemented with two integrated chips. It consists, on the one hand, of two pairs of converters and counters integrated in the same chip, and on the other hand, of a reference and measurement capacitors into the same sensing cell. This configuration permits to reduce stray capacitors by a factor two but also provokes interference between oscillators. Characterization and PSPICE modeling have permitted to understand, to localize causes and then to propose some solutions to avoid and/or minimize these problems.
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Dates et versions

hal-02089708 , version 1 (04-04-2019)

Identifiants

  • HAL Id : hal-02089708 , version 1

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Philippe Menini, G. Blasquez, Patrick Pons, C Douziech, P Favaro, et al.. Optimization of a BiCMOS integrated tranducer for self-compensated capacitive pressure sensor. ICECS'99, IEEE International Conference on Electronics, Circuits and Systems, Sep 1999, Paphos, Cyprus. ⟨hal-02089708⟩
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