Ga doped ZnO thin films deposited by RF sputtering for NO2 sensing
Résumé
Ga doped ZnO thin films have been deposited by Radio-Frequency (RF) magnetron sputtering on fused silica substrates. The structural analysis of the n-type sensitive material showed a preferential orientation in the [00l] direction. The microstructure of the thin film indicated an increasing grain size with the increase of the thicknesses. The micro sensor platforms have been fabricated with ZnO:Ga thin film deposited using a reliable stencil mask onto interdigitated electrodes containing micro-hotplates. The as fabricated micro sensor allows to sense sub-ppm concentration (500 ppb) of nitric dioxide. This system reveals promising sensing performance with a sensitivity Rg/Ra up to 75 at low temperature (50 °C).
| Origine | Fichiers produits par l'(les) auteur(s) |
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