%0 Conference Proceedings %T Ga doped ZnO thin films deposited by RF sputtering for NO2 sensing %+ Centre interuniversitaire de recherche et d'ingenierie des matériaux (CIRIMAT) %+ Équipe MICrosystèmes d'Analyse (LAAS-MICA) %A Presmanes, L. %A Gunasekaran, V. %A Thimont, Y. %A Sinnarasa, I. %A Barnabé, A. %A Tailhades, P. %A Menini, Philippe %< avec comité de lecture %Z Rapport LAAS n° 19195 %( 2019 5th Experiment International Conference (exp.at'19) %B The Experiment@ International Conference (Exp.at'19) %C Funchal, Portugal %Y IEEE %8 2019-06-12 %D 2019 %K ZnO:Ga %K thin film %K RF-sputtering %K gas sensor %K micro-hotplate %K NO2 %K microsensor %K low-cost sensor %Z Engineering Sciences [physics]/Micro and nanotechnologies/MicroelectronicsConference papers %X Ga doped ZnO thin films have been deposited by Radio-Frequency (RF) magnetron sputtering on fused silica substrates. The structural analysis of the n-type sensitive material showed a preferential orientation in the [00l] direction. The microstructure of the thin film indicated an increasing grain size with the increase of the thicknesses. The micro sensor platforms have been fabricated with ZnO:Ga thin film deposited using a reliable stencil mask onto interdigitated electrodes containing micro-hotplates. The as fabricated micro sensor allows to sense sub-ppm concentration (500 ppb) of nitric dioxide. This system reveals promising sensing performance with a sensitivity Rg/Ra up to 75 at low temperature (50 °C). %G English %2 https://laas.hal.science/hal-02172260/document %2 https://laas.hal.science/hal-02172260/file/Abstract_ZnO_final_v5-auteur.pdf %L hal-02172260 %U https://laas.hal.science/hal-02172260 %~ UNIV-TLSE2 %~ UNIV-TLSE3 %~ CNRS %~ INSA-TOULOUSE %~ LAAS %~ OPENAIRE %~ UT1-CAPITOLE %~ LAAS-MICA %~ LAAS-MICRO-NANO-BIO-TECHNOLOGIES %~ INC-CNRS %~ INSA-GROUPE %~ TEST-HALCNRS %~ TOULOUSE-INP %~ UNIV-UT3 %~ UT3-INP %~ UT3-TOULOUSEINP %~ CIRIMAT