Ubiquitous Non-Majorana Zero-Bias Conductance Peaks in Nanowire Devices - LAAS - Laboratoire d'Analyse et d'Architecture des Systèmes Access content directly
Journal Articles Physical Review Letters Year : 2019

Ubiquitous Non-Majorana Zero-Bias Conductance Peaks in Nanowire Devices

Abstract

We perform tunneling measurements on indium antimonide nanowire-superconductor hybrid devices fabricated for the studies of Majorana bound states. At finite magnetic field, resonances that strongly resemble Majorana bound states, including zero-bias pinning, become common to the point of ubiquity. Since Majorana bound states are predicted in only a limited parameter range in nanowire devices, we seek an alternative explanation for the observed zero-bias peaks. With the help of a self-consistent Poission-Schrödinger multiband model developed in parallel, we identify several families of trivial subgap states that overlap and interact, giving rise to a crowded spectrum near zero energy and zero-bias conductance peaks in experiments. These findings advance the search for Majorana bound states through improved understanding of broader phenomena found in superconductor-semiconductor systems.
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Dates and versions

hal-02332243 , version 1 (24-10-2019)

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J Chen, B D Woods, P Yu, M. Hocevar, D. Car, et al.. Ubiquitous Non-Majorana Zero-Bias Conductance Peaks in Nanowire Devices. Physical Review Letters, 2019, 123 (10), pp.107703. ⟨10.1103/PhysRevLett.123.107703⟩. ⟨hal-02332243⟩
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