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            <funder>AcknowledgmentsThis work was financially supported by the European Community’s Seventh Framework Program (Grant No. PITN-GA-2012-316751, Nanoembrace project), the H2020 program(Grant No. PITN-GA-2016-722176, Indeed Project), theFrench state funds managed by the ANR within theFigure 7. STM image of the {110} sidewall of a In-catalyzed InAsNWs after the removal of the As capping layer at 315 °C–325 °C.Tunneling conditions: V sample = +2.5 V, I tunneling = 10 pA.Figure 8. Sequence of temperature-dependent STEM images of anAu-catalyzed GaAs NW capped with a thin As cap. The annealingtemperature is indicated in the images. 7Nanotechnology 30 (2019) 324002 A Díaz Álvarez et alInvestissements d’Avenir programme (Grant No. ANR-11-EQPX-0015, EQUIPEX Excelsior; Grant No. ANR-10-EQPX-0050), EQUIPEX Tempos), the French National ResearchAgency (ANR-16-CE24-0007-01, Dirac III-V project) and theRENATECH network and the Deutsche For-schungsgemeinschaft (Grant No. 390247238). T Xuacknowledges the supports of the National Natural ScienceFoundation of China (Grant No. 61775130). The authors thankC Coinon and X Wallart for the growth of the As capped bulksamples and C Domke, M Heinrich, M Simon, and C Dzeja forparticipating in some of the measurements leading to figure 4</funder>
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              <p>The surface morphology of III-V semiconductor nanowires (NWs) protected by an arsenic cap and subsequently evaporated in ultrahigh vacuum is investigated with scanning tunneling microscopy and scanning transmission electron microscopy. We show that the changes of the surface morphology as a function of the NW composition and the nature of the seed particles are intimately related to the formation and reaction of surface point defects. Langmuir evaporation close to the congruent evaporation temperature causes the formation of vacancies which nucleate and form vacancy islands on {110} sidewalls of self-catalyzed InAs NWs. However, for annealing temperatures much smaller than the congruent temperature, a new phenomenon occurs: group III vacancies form and are filled by excess As atoms, leading to surface As Ga antisites. The resulting Ga adatoms nucleate with excess As atoms at the NW edges, producing monoatomic-step islands on the {110} sidewalls of GaAs NWs. Finally, when gold atoms diffuse from the seed particle onto the {110} sidewalls during evaporation of the protective As cap, Langmuir evaporation does not take place, leaving the sidewalls of InAsSb NWs atomically flat.</p>
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