Development of SiC MOSFET Electrical Model and Experimental Validation: Improvement and Reduction of Parameter Number
Résumé
In this work, a new approach for electrical modeling of Silicon Carbide (SiC) MOSFET is presented. The developed model is inspired by the Curtice model which is using a mathematic function reflecting MOSFET output characteristics. The first simulation results showed good agreement with measurements. Improvement is needed in order to increase model accuracy and to take into account the influence of the junction temperature on device characteristics.
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MIXDES_Development of SiC MOSFET electrical model.pdf (596.69 Ko)
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