Communication Dans Un Congrès Année : 2020

Degradation study of InGaAsN PIN solar cell under 1 MeV electron irradiation

Inès Massiot
Guilhem Almuneau

Résumé

Degradation of InGaAsN pinsubcell under 1MeV electron irradiation was studied by characterizing solar cells and dilute nitride bulklayers before and after irradiation. The measurements show that these cells retain more than 94% of their original photocurrent after an 1015cm-2 electron-irradiation. Moreover, no significant degradation of the optoelectronic properties is observed after irradiation

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hal-03012157 , version 1 (18-11-2020)

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  • HAL Id : hal-03012157 , version 1

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Maxime Levillayer, Sophie Duzellier, Thierry Nuns, Christophe Inguimbert, Tifenn Lecocq, et al.. Degradation study of InGaAsN PIN solar cell under 1 MeV electron irradiation. RADECS 2020, Oct 2020, Online, France. ⟨hal-03012157⟩
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