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              <p>Les dépôts de Silicium (Si) à partir d’une phase gazeuse (Low Pressure Chemical Vapor Deposition -LPCVD) est une technique usuelle de salle blanche. La température de procédé peut donner des dépôts cristallins, en général comportant énormément de défauts, on parle alors de Silicium polycristallin. Il est possible de doper le Silicium polycristallin (Si-poly) pour obtenir une conductivité de l’ordre du kS/cm, suffisante pour son utilisation comme couche de connexion, même si on est loin d’atteindre les conductivités de couches métalliques. L’avantage par rapport à ces dernières est sa compatibilité avec des traitements à (très) haute température. Le dopage par addition de Bore (via BCl3) en substitution dans le dépôt LPCVD de Silicium  réalisé par SiH4, permet l'augmentation de la vitesse de dépôt, la cristallisation à des températures où le dépôt non-dopé est amorphe (T&lt;555°C), et un dépôt conducteur (résistivité   ≈ 10-3 Ohm.cm) quelle que soit la température.Nous présentons dans ce rapport, l'équipement (four horizontal) utilisé pour réaliser ce genre de dépôt, ainsi que le protocole pour réaliser ce type de dépôt.</p>
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