Materials science issues related to the fabrication of highly doped junctions by laser annealing of Group IV semiconductors - LAAS - Laboratoire d'Analyse et d'Architecture des Systèmes Access content directly
Book Section Year : 2021
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hal-03341171 , version 1 (10-09-2021)

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  • HAL Id : hal-03341171 , version 1

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Ray Duffy, Enrico Napolitani, Fuccio Cristiano. Materials science issues related to the fabrication of highly doped junctions by laser annealing of Group IV semiconductors. Laser Annealing Processes in Semiconductor Technology. Theory, Modeling and Applications in Nanoelectronics, Chapter 5, Elsevier, pp.175-250, 2021, 9780128202555. ⟨hal-03341171⟩
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