Sb-based interband cascade Mid-IR devices with top GaAs metamorphic layers
Résumé
We present two different GaSb based interband cascade devices emitting between 3 and 4 µm containing a metamorphic GaAs layer above the active region. The first structure is a Resonant Cavity Light Emitting Diode with an oxidized Al(Ga)As layer whereas the second structure is an Interband Cascade Laser with a GaAs top cladding.
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