A New 77 GHz Sampling Mixer in 28-nm FD-SOI CMOS Technology for Automotive Radar application - LAAS - Laboratoire d'Analyse et d'Architecture des Systèmes
Communication Dans Un Congrès Année : 2022

A New 77 GHz Sampling Mixer in 28-nm FD-SOI CMOS Technology for Automotive Radar application

Résumé

This paper presents a low-IF sampling mixer topology based on a new pulse shaper and designed for automotive radar application. The sampling mixer operation principle is described. Then an original pulse shaper topology convenient for a 77 GHz sampling operation is proposed and implemented in 28-nm FD-SOI CMOS technology. Measurement results show a 1dB input-referred compression power (ICP1dB) of +6.7 dBm and a 9.1 dB Noise Figure (NF) with a conversion gain of-0.7 dB. The power consumption of the mixer is 10 mW on a 1V supply.

Domaines

Electronique
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Dates et versions

hal-03793203 , version 1 (30-09-2022)

Identifiants

Citer

Alexandre Flete, Christophe Viallon, Philippe Cathelin, Thierry Parra. A New 77 GHz Sampling Mixer in 28-nm FD-SOI CMOS Technology for Automotive Radar application. 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022, Jun 2022, Denver, United States. pp.742-745, ⟨10.1109/IMS37962.2022.9865644⟩. ⟨hal-03793203⟩
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