<?xml version="1.0" encoding="utf-8"?>
<TEI xmlns="http://www.tei-c.org/ns/1.0" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:hal="http://hal.archives-ouvertes.fr/" xmlns:gml="http://www.opengis.net/gml/3.3/" xmlns:gmlce="http://www.opengis.net/gml/3.3/ce" version="1.1" xsi:schemaLocation="http://www.tei-c.org/ns/1.0 http://api.archives-ouvertes.fr/documents/aofr-sword.xsd">
  <teiHeader>
    <fileDesc>
      <titleStmt>
        <title>HAL TEI export of hal-03845065</title>
      </titleStmt>
      <publicationStmt>
        <distributor>CCSD</distributor>
        <availability status="restricted">
          <licence target="https://creativecommons.org/publicdomain/zero/1.0/">CC0 1.0 - Universal</licence>
        </availability>
        <date when="2026-05-25T04:44:57+02:00"/>
      </publicationStmt>
      <sourceDesc>
        <p part="N">HAL API Platform</p>
      </sourceDesc>
    </fileDesc>
  </teiHeader>
  <text>
    <body>
      <listBibl>
        <biblFull>
          <titleStmt>
            <title xml:lang="en">Investigating the nucleation of Al2O3 on clean Si in ALD : plasma post and pre-processing</title>
            <author role="aut">
              <persName>
                <forename type="first">Pascal</forename>
                <surname>Dubreuil</surname>
              </persName>
              <email type="md5">5ffcf16a717eb9676b514cf1b5f75044</email>
              <email type="domain">laas.fr</email>
              <idno type="idhal" notation="string">pascal-dubreuil</idno>
              <idno type="idhal" notation="numeric">1094525</idno>
              <idno type="halauthorid" notation="string">772455-1094525</idno>
              <affiliation ref="#struct-389044"/>
            </author>
            <author role="aut">
              <persName>
                <forename type="first">Emmanuel</forename>
                <surname>Scheid</surname>
              </persName>
              <email type="md5">cdbf52039550a2ff4564218dd31ea38e</email>
              <email type="domain">laas.fr</email>
              <idno type="idhal" notation="numeric">1115628</idno>
              <idno type="halauthorid" notation="string">1564572-1115628</idno>
              <idno type="IDREF">https://www.idref.fr/033228450</idno>
              <affiliation ref="#struct-390153"/>
            </author>
            <editor role="depositor">
              <persName>
                <forename>pascal</forename>
                <surname>dubreuil</surname>
              </persName>
              <email type="md5">f5a1de93fac2811140c9929d06ebc7ad</email>
              <email type="domain">laas.fr</email>
            </editor>
          </titleStmt>
          <editionStmt>
            <edition n="v1" type="current">
              <date type="whenSubmitted">2022-12-06 15:29:06</date>
              <date type="whenModified">2025-10-22 18:04:09</date>
              <date type="whenReleased">2022-12-13 12:55:34</date>
              <date type="whenProduced">2022-10-31</date>
              <date type="whenEndEmbargoed">2022-12-06</date>
              <ref type="file" target="https://laas.hal.science/hal-03845065v1/document">
                <date notBefore="2022-12-06"/>
              </ref>
              <ref type="file" subtype="author" n="1" target="https://laas.hal.science/hal-03845065v1/file/PosterAutrans2022-VPascal%20%281%29.pdf" id="file-3845065-3408276">
                <date notBefore="2022-12-06"/>
              </ref>
            </edition>
            <respStmt>
              <resp>contributor</resp>
              <name key="712055">
                <persName>
                  <forename>pascal</forename>
                  <surname>dubreuil</surname>
                </persName>
                <email type="md5">f5a1de93fac2811140c9929d06ebc7ad</email>
                <email type="domain">laas.fr</email>
              </name>
            </respStmt>
          </editionStmt>
          <publicationStmt>
            <distributor>CCSD</distributor>
            <idno type="halId">hal-03845065</idno>
            <idno type="halUri">https://laas.hal.science/hal-03845065</idno>
            <idno type="halBibtex">dubreuil:hal-03845065</idno>
            <idno type="halRefHtml">&lt;i&gt;School of Atomic Layer Deposition&lt;/i&gt;, Oct 2022, AUTRANS, France. 2022</idno>
            <idno type="halRef">School of Atomic Layer Deposition, Oct 2022, AUTRANS, France. 2022</idno>
            <availability status="restricted">
              <licence target="https://about.hal.science/hal-authorisation-v1/">HAL Authorization<ref corresp="#file-3845065-3408276"/></licence>
            </availability>
          </publicationStmt>
          <seriesStmt>
            <idno type="stamp" n="UNIV-TLSE2">Université Toulouse 2</idno>
            <idno type="stamp" n="UNIV-TLSE3">Université de Toulouse</idno>
            <idno type="stamp" n="CNRS">CNRS - Centre national de la recherche scientifique</idno>
            <idno type="stamp" n="INSA-TOULOUSE">Institut National des Sciences Appliquées de Toulouse</idno>
            <idno type="stamp" n="LAAS">Laboratoire d'analyse et d'architecture des systèmes</idno>
            <idno type="stamp" n="UT1-CAPITOLE">Université Toulouse 1 Capitole</idno>
            <idno type="stamp" n="LAAS-MPN" corresp="LAAS-MICRO-NANO-BIO-TECHNOLOGIES">Équipe Matériaux et Procédés pour la Nanoélectronique</idno>
            <idno type="stamp" n="LAAS-TEAM" corresp="LAAS">Service Techniques et Équipements Appliqués à la Microélectronique</idno>
            <idno type="stamp" n="LAAS-MICRO-NANO-BIO-TECHNOLOGIES" corresp="LAAS">LAAS-Micro Nano Bio Technologies</idno>
            <idno type="stamp" n="INSA-GROUPE">Groupe INSA</idno>
            <idno type="stamp" n="TOULOUSE-INP">Toulouse - INP</idno>
            <idno type="stamp" n="UNIV-UT3">Université Toulouse 3</idno>
            <idno type="stamp" n="UT3-INP">Université de Toulouse / Toulouse INP</idno>
            <idno type="stamp" n="UT3-TOULOUSEINP">Université de Toulouse / Toulouse INP</idno>
            <idno type="stamp" n="TEST3-HALCNRS">TEST3-HALCNRS</idno>
            <idno type="stamp" n="TEST7-HALCNRS">test 7 du portail hal cnrs</idno>
            <idno type="stamp" n="RENATECH">RENATECH</idno>
          </seriesStmt>
          <notesStmt>
            <note type="audience" n="2">International</note>
            <note type="invited" n="0">No</note>
            <note type="popular" n="0">No</note>
            <note type="peer" n="1">Yes</note>
            <note type="proceedings" n="1">Yes</note>
          </notesStmt>
          <sourceDesc>
            <biblStruct>
              <analytic>
                <title xml:lang="en">Investigating the nucleation of Al2O3 on clean Si in ALD : plasma post and pre-processing</title>
                <author role="aut">
                  <persName>
                    <forename type="first">Pascal</forename>
                    <surname>Dubreuil</surname>
                  </persName>
                  <email type="md5">5ffcf16a717eb9676b514cf1b5f75044</email>
                  <email type="domain">laas.fr</email>
                  <idno type="idhal" notation="string">pascal-dubreuil</idno>
                  <idno type="idhal" notation="numeric">1094525</idno>
                  <idno type="halauthorid" notation="string">772455-1094525</idno>
                  <affiliation ref="#struct-389044"/>
                </author>
                <author role="aut">
                  <persName>
                    <forename type="first">Emmanuel</forename>
                    <surname>Scheid</surname>
                  </persName>
                  <email type="md5">cdbf52039550a2ff4564218dd31ea38e</email>
                  <email type="domain">laas.fr</email>
                  <idno type="idhal" notation="numeric">1115628</idno>
                  <idno type="halauthorid" notation="string">1564572-1115628</idno>
                  <idno type="IDREF">https://www.idref.fr/033228450</idno>
                  <affiliation ref="#struct-390153"/>
                </author>
              </analytic>
              <monogr>
                <idno type="localRef">Rapport LAAS n° 22458</idno>
                <meeting>
                  <title>School of Atomic Layer Deposition</title>
                  <date type="start">2022-10-31</date>
                  <date type="end">2022-11-03</date>
                  <settlement>AUTRANS</settlement>
                  <country key="FR">France</country>
                </meeting>
                <respStmt>
                  <resp>conferenceOrganizer</resp>
                  <name>GdR RAFALD</name>
                </respStmt>
                <imprint>
                  <date type="datePub">2022-10</date>
                </imprint>
              </monogr>
            </biblStruct>
          </sourceDesc>
          <profileDesc>
            <langUsage>
              <language ident="en">English</language>
            </langUsage>
            <textClass>
              <keywords scheme="author">
                <term xml:lang="en">plasma treatments</term>
                <term xml:lang="en">plasma etching</term>
                <term xml:lang="en">Atomic Layer Deposition</term>
                <term xml:lang="en">Al2O3 growth kinetics</term>
              </keywords>
              <classCode scheme="halDomain" n="spi.nano">Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics</classCode>
              <classCode scheme="halTypology" n="POSTER">Poster communications</classCode>
              <classCode scheme="halOldTypology" n="POSTER">Poster communications</classCode>
              <classCode scheme="halTreeTypology" n="POSTER">Poster communications</classCode>
            </textClass>
            <abstract xml:lang="en">
              <p>This study is dedicated to the investigation of the nucleation behavior of Al2O3 deposited by ALD via TetraMethylAlumina (TMA) and H2O on clean Silicon. We already showed in previous studies1,2 that this nucleation may follow a island growth regime, with a seed density ranging approximatively at 0.5% of the Silicon surface density. This is supposed to lead to the growth of non-continuous layers, for thicknesses lower than 3nm. In this work, we first study the oxidation in plasma of layers (supposedly Al2O3) grown after a few number of cycles (13 to 50). The fact that there is a noticeable oxidation of layers thinner than 5m confirms the non-continuous character of these last.We then try to optimize the in-situ plasma pre-processing, for which we already demonstrated1,2 that the creation of an intermediate layer by nitridation of the Si gave an instantaneous linear growth regime of Al2O3 i.e. a seed density at 100% on the initial surface. We tried to optimize this intermediate layer, using different source of gases instead of N2-NH3 used previously1,2, which presented the drawback to give a relatively thick layer (1.5nm) with a low material density. We compare three different compounds for the plasma pre-processing : N2, N2+O2 and O2, by performing 30cyles of Al2O3 deposition. Observations by TEM and EDX show that the pre-treatments involving N2 are effective and optimum, creating a thinner interface (0.5 nm), and a continuous layer of Al2O3 with a thickness of 3nm, as expected for a continuous growth. Using plasma O2 only does not give so positive results, with a thicker interfacial layer and a thinner deposited Al2O3.Finally, an attempt was made using in-situ plasma SF6 pre-treatments. The purpose was to avoid the creation of an intermediate layer, as obtained by nitridating/oxidizing plasmas. We hoped to improve the nucleation on Si by removing the Si-H bonds leaved on the Si surface by wet cleaning with diluted HF, because these Si-H bonds were supposed to be at the origin of the low density of seeds for ALD deposition. The first experiments exhibit unattended results : the deposition kinetic is strongly reduced, with a complex dependence with the parameters of the plasma (time , pressure and power). After further “optimization”, we obtain a case were no deposition is observed till 120cycles, and an apparent deposited thickness of 12nm after 250cycles. For this last experiment, we observed, for the first time, by AFM nuclei of Al2O3, confirming that, for this case the initial seed density is around 0.002% of the Si surface density. Assumptions for the explanation of these results are made, involving cleanness of the surface, and leading for promising results in micro-electronic applications.The work was partly supported by the French Renatech network.[1] : Gakis et al., J. Appl. Phys., 2019[2] : Gakis et al.  RAFALD 2019 Toulouse</p>
            </abstract>
            <particDesc>
              <org type="ir" xml:id="fr-esr-fdr-ir-097">
                <orgName type="acronym">RENATECH+</orgName>
                <idno type="wikidata">Q33121910</idno>
              </org>
            </particDesc>
          </profileDesc>
        </biblFull>
      </listBibl>
    </body>
    <back>
      <listOrg type="structures">
        <org type="researchteam" xml:id="struct-389044" status="OLD">
          <orgName>Service Techniques et Équipements Appliqués à la Microélectronique</orgName>
          <orgName type="acronym">LAAS-TEAM</orgName>
          <date type="end">2025-01-01</date>
          <desc>
            <address>
              <country key="FR"/>
            </address>
            <ref type="url">https://www.laas.fr/public/fr/team</ref>
          </desc>
          <listRelation>
            <relation active="#struct-459" type="direct"/>
            <relation active="#struct-81148" type="indirect"/>
            <relation name="443875" active="#struct-443875" type="indirect"/>
            <relation active="#struct-116255" type="indirect"/>
            <relation active="#struct-301232" type="indirect"/>
            <relation active="#struct-443875" type="indirect"/>
            <relation active="#struct-116256" type="indirect"/>
            <relation active="#struct-217752" type="indirect"/>
            <relation name="UPR8001" active="#struct-441569" type="indirect"/>
            <relation active="#struct-448187" type="indirect"/>
          </listRelation>
        </org>
        <org type="researchteam" xml:id="struct-390153" status="OLD">
          <orgName>Équipe Matériaux et Procédés pour la Nanoélectronique</orgName>
          <orgName type="acronym">LAAS-MPN</orgName>
          <date type="end">2025-01-01</date>
          <desc>
            <address>
              <country key="FR"/>
            </address>
            <ref type="url">https://www.laas.fr/public/fr/mpn</ref>
          </desc>
          <listRelation>
            <relation active="#struct-459" type="direct"/>
            <relation active="#struct-81148" type="indirect"/>
            <relation name="443875" active="#struct-443875" type="indirect"/>
            <relation active="#struct-116255" type="indirect"/>
            <relation active="#struct-301232" type="indirect"/>
            <relation active="#struct-443875" type="indirect"/>
            <relation active="#struct-116256" type="indirect"/>
            <relation active="#struct-217752" type="indirect"/>
            <relation name="UPR8001" active="#struct-441569" type="indirect"/>
            <relation active="#struct-448187" type="indirect"/>
          </listRelation>
        </org>
        <org type="laboratory" xml:id="struct-459" status="OLD">
          <idno type="IdRef">199278792</idno>
          <idno type="ISNI">0000 0001 2188 216X </idno>
          <idno type="RNSR">199517454Y</idno>
          <idno type="ROR">https://ror.org/03vcm6439</idno>
          <orgName>Laboratoire d'analyse et d'architecture des systèmes</orgName>
          <orgName type="acronym">LAAS</orgName>
          <date type="start">1968-01-01</date>
          <date type="end">2025-01-01</date>
          <desc>
            <address>
              <addrLine>7 Av du colonel Roche 31077 TOULOUSE CEDEX 4</addrLine>
              <country key="FR"/>
            </address>
            <ref type="url">http://www.laas.fr</ref>
          </desc>
          <listRelation>
            <relation active="#struct-81148" type="direct"/>
            <relation name="443875" active="#struct-443875" type="indirect"/>
            <relation active="#struct-116255" type="direct"/>
            <relation active="#struct-301232" type="indirect"/>
            <relation active="#struct-443875" type="indirect"/>
            <relation active="#struct-116256" type="direct"/>
            <relation active="#struct-217752" type="direct"/>
            <relation name="UPR8001" active="#struct-441569" type="direct"/>
            <relation active="#struct-448187" type="direct"/>
          </listRelation>
        </org>
        <org type="institution" xml:id="struct-81148" status="VALID">
          <idno type="IdRef">026404354</idno>
          <idno type="ISNI">0000000121902837</idno>
          <idno type="ROR">https://ror.org/0443n9e75</idno>
          <orgName>Université Toulouse Capitole</orgName>
          <orgName type="acronym">UT Capitole</orgName>
          <date type="start">1970-01-01</date>
          <desc>
            <address>
              <addrLine>2 rue du Doyen-Gabriel-Marty - 31042 Toulouse Cedex 9</addrLine>
              <country key="FR"/>
            </address>
            <ref type="url">http://www.ut-capitole.fr/</ref>
          </desc>
          <listRelation>
            <relation name="443875" active="#struct-443875" type="direct"/>
          </listRelation>
        </org>
        <org type="regroupinstitution" xml:id="struct-443875" status="VALID">
          <idno type="ROR">https://ror.org/017tgbk05</idno>
          <orgName>Communauté d'universités et établissements de Toulouse</orgName>
          <orgName type="acronym">Comue de Toulouse</orgName>
          <desc>
            <address>
              <addrLine>41 Allée Jules Guesde, 31000 Toulouse</addrLine>
              <country key="FR"/>
            </address>
            <ref type="url">https://www.univ-toulouse.fr/</ref>
          </desc>
        </org>
        <org type="institution" xml:id="struct-116255" status="VALID">
          <idno type="IdRef">026388766</idno>
          <idno type="ISNI">0000 0001 2286 8343</idno>
          <idno type="ROR">https://ror.org/01h8pf755</idno>
          <idno type="Wikidata">Q858979</idno>
          <orgName>Institut National des Sciences Appliquées - Toulouse</orgName>
          <orgName type="acronym">INSA Toulouse</orgName>
          <date type="start">1963-10-21</date>
          <desc>
            <address>
              <addrLine>135, avenue de Rangueil - 31077 Toulouse cedex 4</addrLine>
              <country key="FR"/>
            </address>
            <ref type="url">http://www.insa-toulouse.fr</ref>
          </desc>
          <listRelation>
            <relation active="#struct-301232" type="direct"/>
            <relation active="#struct-443875" type="direct"/>
          </listRelation>
        </org>
        <org type="regroupinstitution" xml:id="struct-301232" status="VALID">
          <idno type="IdRef">162105150</idno>
          <orgName>Institut National des Sciences Appliquées</orgName>
          <orgName type="acronym">INSA</orgName>
          <desc>
            <address>
              <country key="FR"/>
            </address>
          </desc>
        </org>
        <org type="institution" xml:id="struct-116256" status="VALID">
          <idno type="IdRef">026403994</idno>
          <idno type="ROR">https://ror.org/04ezk3x31</idno>
          <orgName>Université Toulouse - Jean Jaurès</orgName>
          <orgName type="acronym">UT2J</orgName>
          <date type="start">1971-01-01</date>
          <desc>
            <address>
              <addrLine>5 allées Antonio Machado - 31058 Toulouse Cedex 9</addrLine>
              <country key="FR"/>
            </address>
            <ref type="url">http://www.univ-tlse2.fr</ref>
          </desc>
          <listRelation>
            <relation active="#struct-443875" type="direct"/>
          </listRelation>
        </org>
        <org type="institution" xml:id="struct-217752" status="OLD">
          <idno type="IdRef">026404672</idno>
          <idno type="ISNI">0000000121617331</idno>
          <idno type="ROR">https://ror.org/02v6kpv12</idno>
          <idno type="Wikidata">Q1273188</idno>
          <orgName>Université Toulouse III - Paul Sabatier</orgName>
          <orgName type="acronym">UT3</orgName>
          <date type="end">2025-01-01</date>
          <desc>
            <address>
              <addrLine>118 route de Narbonne - 31062 Toulouse</addrLine>
              <country key="FR"/>
            </address>
            <ref type="url">http://www.univ-tlse3.fr/</ref>
          </desc>
          <listRelation>
            <relation active="#struct-443875" type="direct"/>
          </listRelation>
        </org>
        <org type="regroupinstitution" xml:id="struct-441569" status="VALID">
          <idno type="IdRef">02636817X</idno>
          <idno type="ISNI">0000000122597504</idno>
          <idno type="ROR">https://ror.org/02feahw73</idno>
          <orgName>Centre National de la Recherche Scientifique</orgName>
          <orgName type="acronym">CNRS</orgName>
          <date type="start">1939-10-19</date>
          <desc>
            <address>
              <country key="FR"/>
            </address>
            <ref type="url">https://www.cnrs.fr/</ref>
          </desc>
        </org>
        <org type="institution" xml:id="struct-448187" status="VALID">
          <idno type="IdRef">026388820</idno>
          <idno type="ISNI">0000000121766169</idno>
          <idno type="ROR">https://ror.org/033p9g875</idno>
          <orgName>Institut National Polytechnique (Toulouse)</orgName>
          <orgName type="acronym">Toulouse INP</orgName>
          <desc>
            <address>
              <country key="FR"/>
            </address>
            <ref type="url">https://www.inp-toulouse.fr/</ref>
          </desc>
          <listRelation>
            <relation active="#struct-443875" type="direct"/>
          </listRelation>
        </org>
      </listOrg>
    </back>
  </text>
</TEI>