Prediction of the evolution of defects induced by the heated implantation process: Contribution of kinetic Monte Carlo in a multi-scale modeling framework - LAAS - Laboratoire d'Analyse et d'Architecture des Systèmes
Article Dans Une Revue Solid-State Electronics Année : 2023

Prediction of the evolution of defects induced by the heated implantation process: Contribution of kinetic Monte Carlo in a multi-scale modeling framework

Résumé

Extended defects formed as a result of heated implantation and thermal annealing are studied using transmission electron microscopy and kinetic Monte Carlo simulations. We highlight the relevance of using kinetic Monte Carlo approach to provide information to continuum-scale simulations as well as the value of integrating data from atomic-scale calculations for its calibration.

Domaines

Electronique
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Dates et versions

hal-03867418 , version 1 (23-11-2022)

Identifiants

Citer

P.L. Julliard, A. Johnsson, N. Zographos, R. Demoulin, Richard Monflier, et al.. Prediction of the evolution of defects induced by the heated implantation process: Contribution of kinetic Monte Carlo in a multi-scale modeling framework. Solid-State Electronics, 2023, 200, pp.108521. ⟨10.1016/j.sse.2022.108521⟩. ⟨hal-03867418⟩
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