HCHO Sensing Mechanism of In4Sn3O12 Revealed by DRIFTS and DFT

The combination of operando Diffuse Reflectance Infrared Fourier Transform Spectroscopy measurement and Density Functional Theory calculation reveals the counterintuitive HCHO sensing mechanism of In4Sn3O12. It is merely partial oxidation of HCHO into formate (or HCOOH) with medium activation energy (0.43–0.68 eV) and sufficient electron donation effect that is responsible for the sensor signal at the optimum temperature of 200 °C. The Sn (3a)-connected O is the active site and plays key roles in both HCHO adsorption and partial oxidation.

Domaines

Matériaux Chimie théorique et/ou physique

Fichier principal

JPCCTingqiang.pdf (18.23 Mo)

Origine	Fichiers produits par l'(les) auteur(s)

Anne Hemeryck : Connectez-vous pour contacter le contributeur

https://laas.hal.science/hal-04106992

Soumis le : jeudi 25 mai 2023-22:14:17

Dernière modification le : jeudi 24 octobre 2024-11:24:04

Dates et versions

hal-04106992 , version 1 (25-05-2023)

Identifiants

HAL Id : hal-04106992 , version 1
DOI : 10.1021/acs.jpcc.3c00686

Citer

Tingqiang Yang, Anne Hémeryck, Suman Pokhrel, Wen Chen, Lutz Mädler, et al.. HCHO Sensing Mechanism of In4Sn3O12 Revealed by DRIFTS and DFT. Journal of Physical Chemistry C, 2023, ⟨10.1021/acs.jpcc.3c00686⟩. ⟨hal-04106992⟩

Exporter

BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite

Collections

UNIV-TLSE2 CNRS INSA-TOULOUSE LAAS UT1-CAPITOLE LAAS-MICRO-NANO-BIO-TECHNOLOGIES LAAS-M3 LAAS-SYSTEMES-COMPLEXES INSA-GROUPE TOULOUSE-INP UNIV-UT3 UT3-TOULOUSEINP

133 Consultations

77 Téléchargements