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                <term xml:lang="en">Diamond</term>
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              <p>Le projet ANR MOVeToDIAM vise la réalisation de diodes TMBS et de transistors MOSFET verticaux à canal P et à grille en U sur diamant. Cela nécessite la maîtrise d'étapes technologiques clés comme la gravure sèche RIE-ICP pour former la structure mesa de la diode TMBS et pour l'ouverture de la grille du transistor MOSFET. Nous présentons ici les travaux d'optimisation de la gravure sèche du diamant à base d'Oxygène.</p>
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