Dynamic RDS-on degradation analysis on power GaN HEMT by means of TCAD simulations and experimental measurement - LAAS - Laboratoire d'Analyse et d'Architecture des Systèmes Accéder directement au contenu
Communication Dans Un Congrès Année : 2023

Dynamic RDS-on degradation analysis on power GaN HEMT by means of TCAD simulations and experimental measurement

Résumé

This paper deals with the dynamic RDS-on degradation of GaN HEMT for 650V application. An overview of different parameters impacting the performances of the devices were investigated experimentally. From temperature dependent characterisations the main trap at the origin of the degradation could be extracted. The signature of carbon in the GaN buffer could be confirmed by TCAD simulation, where the same trends were reproduced.

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Dates et versions

hal-04128305 , version 1 (14-06-2023)

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Domaine public

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  • HAL Id : hal-04128305 , version 1

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Gaëtan Toulon, Cristina Miccoli, David Trémouilles, Frédéric Morancho, Maria-Eloisa Castagna, et al.. Dynamic RDS-on degradation analysis on power GaN HEMT by means of TCAD simulations and experimental measurement. WOCSDICE - EXMATEC 2023 6th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe 17th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, May 2023, Palerme, Italy. ⟨hal-04128305⟩
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