Dynamic RDS-on degradation analysis on power GaN HEMT by means of TCAD simulations and experimental measurement
Résumé
This paper deals with the dynamic RDS-on degradation of GaN HEMT for 650V application. An overview of different parameters impacting the performances of the devices were investigated experimentally. From temperature dependent characterisations the main trap at the origin of the degradation could be extracted. The signature of carbon in the GaN buffer could be confirmed by TCAD simulation, where the same trends were reproduced.
Domaines
Sciences de l'ingénieur [physics]Origine | Fichiers produits par l'(les) auteur(s) |
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Licence |
Domaine public
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