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Article Dans Une Revue Microelectronics Reliability Année : 2023

New reliability model for power SiC MOSFET technologies under static and dynamic gate stress

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This work investigates the V th degradation of commercial power SiC MOSFET technologies under HTGB and AC stresses with Gate Switching Stress conditions by using relatively accelerated tests whose stressors do not exceed the datasheet specifications. A new model that takes into consideration the variability of the exponent of powerlaw for V th drift has been proposed and experimentally verified on planar and trench technologies. The proposed model is useful to estimate accurately the lifetime for any condition or complex mission profile.
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M. Zerarka, V. Rustichelli, O. Perrotin, J.M. Reynes, David Trémouilles, et al.. New reliability model for power SiC MOSFET technologies under static and dynamic gate stress. Microelectronics Reliability, 2023, 150, pp.115190. ⟨10.1016/j.microrel.2023.115190⟩. ⟨hal-04298338⟩
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