Understanding and control of the formation of metallic nanoscale silicide contacts on vertical nanostructured channel for advanced 3D nanoelectronics devices: from Si to high mobility materials - LAAS - Laboratoire d'Analyse et d'Architecture des Systèmes
Conference Papers Year : 2024

Understanding and control of the formation of metallic nanoscale silicide contacts on vertical nanostructured channel for advanced 3D nanoelectronics devices: from Si to high mobility materials

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hal-04714304 , version 1 (30-09-2024)

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  • HAL Id : hal-04714304 , version 1

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Jonas Müller, Nicolas Mallet, Rémi Demoulin, Leonardo Cancellara, Aurélie Lecestre, et al.. Understanding and control of the formation of metallic nanoscale silicide contacts on vertical nanostructured channel for advanced 3D nanoelectronics devices: from Si to high mobility materials. E-MRS Fall 2024, Sep 2024, Warsaw, Poland. ⟨hal-04714304⟩
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