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            <title xml:lang="en">User manual for the ALD BENEQ TFS 200 from LAAS-CNRS October 2024</title>
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                <title xml:lang="en">User manual for the ALD BENEQ TFS 200 from LAAS-CNRS October 2024</title>
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              <p>With the emergence of flexible electronic devices and photovoltaics, demand has increased for deposits whose thickness must be finely controlled for encapsulation/coating, passivation and a barrier layer limiting the injection of carriers. For these reasons, atomic layer deposition (ALD) is widely implemented in laboratories and R&amp;amp;D structures that develop new materials and processes. The ALD or ALCVD technique is a recent technique derived from chemical vapor deposition (CVD). This deposition process is based on the sequential introduction of precursors, which allows the material to be developed monolayer by monolayer and makes the growth self-limiting and controlled by the surface; unlike the CVD technique where the interaction between the flow of a gas mixture and a heated substrate leads to the growth of a thin layer. In the case of ideal CVD growth, there are no reactions of the gases between them (no homogeneous reaction), they interact on the surface of the substrate where they form a solid film by heterogeneous reaction. The substrate must therefore have a sufficient temperature to allow the surface reaction to occur. The equipment is presented, as well as the procedure for Al2O3 deposition for several deposition cycles at different temperatures.</p>
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              <p>Avec l’émergence de dispositifs électroniques flexibles, du photovoltaïque, la demande a augmenté pour des dépôts dont l’épaisseur doit être finement contrôlée pour l’encapsulation/enrobage, la passivation et une couche barrière limitant l’injection des porteurs. Pour ces raisons, le dépôt de couche(s) atomique(s) (ALD) est largement implantée dans les laboratoires et structures R&amp;D qui développent de nouveaux matériaux et procédés. La technique ALD ou ALCVD est une technique récente dérivée du dépôt chimique en phase vapeur (CVD). Ce procédé de dépôt est basé sur l’introduction séquentielle de précurseurs, ce qui permet d’élaborer le matériau monocouche par monocouche et rend la croissance auto-limitante et contrôlée par la surface; contrairement à la technique CVD où l’interaction entre le flux d’un mélange de gaz et un substrat chauffé conduit à la croissance d’une couche mince. Dans le cas d’une croissance CVD idéale, il n’y a pas de réactions des gaz entre eux (pas de réaction homogène), ils interagissent à la surface du substrat où ils forment un film solide par réaction hétérogène. Le substrat doit donc avoir une température suffisante pour permettre à la réaction de surface de se produire. L'équipement est présenté, ainsi que la procédure d'un dépôt Al2O3 pour plusieurs cycles de dépôt à différentes températures.</p>
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