Simulation of a GaInP 2 -GaAs -GaInAsN -Ge photovoltaic cell for space applications
Résumé
We use an open-source simulation software to design III-V multi-junction solar cells containing a dilute nitride subcell. We discuss the different modeling techniques in terms of physical models and numerical methods, and provide an educated guess for a GaInP2 -GaAs -GaInAsN -Ge lattice-matched 4-junction solar cell performance assessment. We suggest a way to ensure an effective computation of the main output values of an opensource Poisson-Drift-Diffusion solver for multi-junction solar cell analysis. An optimization of a multi-junction cell including a n-i-p subcell is performed, starting from basic theoretical considerations, to the use of a double-layer anti-reflective coating to target the most limiting subcell, and then with an optimization of the n-i-p architecture in the 1eV subcell with respect to the GaInAsN layer properties. We show that the detrimental effects of low diffusion lengths in the GaInAsN layer can be alleviated by taking advantage of field-assisted collection.
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