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Nanoscale measurements of phosphorous-induced lattice expansion in nanosecond laser annealed germaniumAPL Materials, 2018, 6 (5), pp.058504. ⟨10.1063/1.5022876⟩
Journal articles
hal-01796115v1
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Extended defects in ion-implanted si during nanosecond laser annealingJunction Technology (IWJT), 2014 International Workshop on, May 2014, Shanghai, China. pp.7-12, ⟨10.1109/IWJT.2014.6842019⟩
Conference papers
hal-01721156v1
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Defects Investigation in Nanosecond laser Annealed Crystalline Silicon: Identification and Localization22nd International Conference on Ion Implantation Technology, Sep 2018, Würzburg, Germany. pp.4, ⟨10.1109/IIT.2018.8807933⟩
Conference papers
hal-01803955v2
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