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Nanoscale measurements of phosphorous-induced lattice expansion in nanosecond laser annealed germaniumAPL Materials, 2018, 6 (5), pp.058504. ⟨10.1063/1.5022876⟩
Journal articles
hal-01796115v1
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Materials science issues related to the fabrication of highly doped junctions by laser annealing of Group IV semiconductorsLaser Annealing Processes in Semiconductor Technology. Theory, Modeling and Applications in Nanoelectronics, Chapter 5, Elsevier, pp.175-250, 2021, 9780128202555
Book section
hal-03341171v1
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Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage CurrentIEEE Transactions on Electron Devices, 2014, 61 (12), pp.4047 - 4055. ⟨10.1109/ted.2014.2364957⟩
Journal articles
hal-01921394v1
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