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Study of recrystallization and activation processes in thin and highly doped Silicon-On-Insulator layers by nanosecond Laser Thermal AnnealingJournal of Applied Physics, 2022, 131 (6), pp.065301
Journal articles
hal-03454821v2
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Stress relaxation and dopant activation in nsec laser annealed SiGeIWJT - International Workshop on Junction Technology, Jun 2021, Kyoto (on line), Japan. ⟨10.23919/IWJT52818.2021.9609361⟩
Conference papers
hal-03449341v1
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Defects Investigation in Nanosecond laser Annealed Crystalline Silicon: Identification and Localization22nd International Conference on Ion Implantation Technology, Sep 2018, Würzburg, Germany. pp.4, ⟨10.1109/IIT.2018.8807933⟩
Conference papers
hal-01803955v2
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