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Locally Ion Implantation and Annealing Effects in DiamondE-MRS 2022 Fall Meeting., Sep 2022, Warsaw, Poland
Conference papers
hal-03766749v1
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Première démonstration expérimentale d’un interrupteur HEMT normally-off en GaN avec une région P-GaN enterréeSymposium de Génie Electrique (SGE 2018), Université de Lorraine [UL], Jul 2018, Nancy, France. pp.3 - 5
Conference papers
hal-02981903v2
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Implantation-induced structural defects in highly activated USJs: Boron precipitation and trapping in pre-Amorphised silicon12th International Workshop on Junction Technology (IWJT 2012), May 2012, Shanghai, China. pp.1--7, ⟨10.1109/IWJT.2012.6212827⟩
Conference papers
hal-01928869v1
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Advantages and challenges of Plasma Immersion Ion Implantation for Power devices manufacturing on Si, SiC and GaN using PULSION ® tool22nd International Conference on Ion Implantation Technology (IIT), Sep 2018, Würzburg, Germany. 5p., ⟨10.1109/IIT.2018.8807978⟩
Conference papers
hal-01955688v1
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