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Nanoscale measurements of phosphorous-induced lattice expansion in nanosecond laser annealed germanium
Simona Boninelli
,
R. Milazzo
,
Robert Carles
,
Florent Houdellier
,
Ray Duffy
,
et al.
Journal articles
hal-01796115v1
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Defect evolution and dopant activation in laser annealed Si and Ge
Fuccio Cristiano
,
M. Shayesteh
,
R. Duffy
,
K. Huet
,
F. Mazzamuto
,
et al.
Journal articles
hal-01921268v1
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Anisotropic electron g factor as a probe of the electronic structure of GaBi x As 1 − x / GaAs epilayers
Christopher Broderick
,
Simone Mazzucato
,
Hélène Carrère
,
Thierry Amand
,
Hajer Makhloufi
,
et al.
Journal articles
hal-02050898v2
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Materials science issues related to the fabrication of highly doped junctions by laser annealing of Group IV semiconductors
Ray Duffy
,
Enrico Napolitani
,
Fuccio Cristiano
Laser Annealing Processes in Semiconductor Technology. Theory, Modeling and Applications in Nanoelectronics, Chapter 5, Elsevier, pp.175-250, 2021, 9780128202555
Book section
hal-03341171v1
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Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current
Maryam Shayesteh
,
Dan O' Connell
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Farzan Gity
,
Philip Murphy-Armando
,
Ran Yu
,
et al.
Journal articles
hal-01921394v1
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