Search - LAAS - Laboratoire d'Analyse et d'Architecture des Systèmes Access content directly

Filter your results

5 Results
Structure: Internal structure identifier : 210803
Image document

Nanoscale measurements of phosphorous-induced lattice expansion in nanosecond laser annealed germanium

Simona Boninelli , R. Milazzo , Robert Carles , Florent Houdellier , Ray Duffy , et al.
APL Materials, 2018, 6 (5), pp.058504. ⟨10.1063/1.5022876⟩
Journal articles hal-01796115v1

Defect evolution and dopant activation in laser annealed Si and Ge

Fuccio Cristiano , M. Shayesteh , R. Duffy , K. Huet , F. Mazzamuto , et al.
Materials Science in Semiconductor Processing, 2016, 42, pp.188 - 195. ⟨10.1016/j.mssp.2015.09.011⟩
Journal articles hal-01921268v1
Image document

Anisotropic electron g factor as a probe of the electronic structure of GaBi x As 1 − x / GaAs epilayers

Christopher Broderick , Simone Mazzucato , Hélène Carrère , Thierry Amand , Hajer Makhloufi , et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2014, 90 (19), ⟨10.1103/PhysRevB.90.195301⟩
Journal articles hal-02050898v2

Materials science issues related to the fabrication of highly doped junctions by laser annealing of Group IV semiconductors

Ray Duffy , Enrico Napolitani , Fuccio Cristiano
Laser Annealing Processes in Semiconductor Technology. Theory, Modeling and Applications in Nanoelectronics, Chapter 5, Elsevier, pp.175-250, 2021, 9780128202555
Book section hal-03341171v1
Image document

Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current

Maryam Shayesteh , Dan O' Connell , Farzan Gity , Philip Murphy-Armando , Ran Yu , et al.
IEEE Transactions on Electron Devices, 2014, 61 (12), pp.4047 - 4055. ⟨10.1109/ted.2014.2364957⟩
Journal articles hal-01921394v1