This paper reports the design and simulation of 10 GHz VCO based on RF MEMS solenoid inductor. We have investigated four RF MEMS solenoid inductors using FEM software. Indeed, we have studied the effect of different dielectric substrate and metallic coil on inductors responses. Higher performances are obtained using copper coil and SU8 dielectric substrate: SRF= 20.8 GHz, Qmax= 60.9, and L = 2.6 nH at 10 GHz. Therefore, we have designed and investigated a cross-coupled CMOS VCO based on the best RF MEMS solenoid inductor. The obtained results show a wide tuning range TR = 46% comprised between 10 GHz and 14.6 GHz, and a good linearity of frequency variation in response of control voltage. Moreover, output signals present a high voltage upper than 1.2 V and a low phase-noise PN =-102.37 dBc/Hz at 1 MHz. In addition, the spectral analyze show that output peak power reaches 14.56 dBm at a center frequency of 10 GHz and the second harmonic is less than-58.9 dBm. These results prove high spectral signal ability of the proposed RF MEMS CMOS VCO at 10 GHz.