Analysis of heavily boron-doped diamond Raman spectrum - LAAS - Laboratoire d'Analyse et d'Architecture des Systèmes
Article Dans Une Revue Diamond and Related Materials Année : 2018

Analysis of heavily boron-doped diamond Raman spectrum

Résumé

Lattice disorder, electronic Raman scattering, and Fano interaction effects are at the genesis of the Raman spectrum of heavily boron-doped diamond. However, no accurate unified description of this spectrum has been reported yet. In this work, we propose a novel analysis of the Raman spectrum of boron-doped diamond based on classical models of electronic Raman scattering and Fano effect. This new analysis shows that the Raman spectrum of boron-doped diamond results from the combination of electronic Raman scattering and its interaction, i.e. Fano effect, with the diamond phonon density of states and it confirms the 500 cm −1 and 1200 cm −1 bands originate from the phonon density of states.
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Dates et versions

hal-01956849 , version 1 (11-02-2019)

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V. Mortet, A. Taylor, Z. Vlčková Živcová, D. Machon, O. Frank, et al.. Analysis of heavily boron-doped diamond Raman spectrum. Diamond and Related Materials, 2018, 88, pp.163-166. ⟨10.1016/j.diamond.2018.07.013⟩. ⟨hal-01956849⟩
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