Sub-ppm NO2 sensing in temperature cycled mode with Ga doped ZnO thin films deposited by RF sputtering - LAAS - Laboratoire d'Analyse et d'Architecture des Systèmes
Communication Dans Un Congrès Année : 2019

Sub-ppm NO2 sensing in temperature cycled mode with Ga doped ZnO thin films deposited by RF sputtering

Résumé

In this work Ga doped ZnO thin films have been deposited by RF magnetron sputtering onto a silicon micro-hotplate and their structural, microstructural and gas sensing properties have been studied. ZnO:Ga thin film with a thickness of 90 nm has been deposited onto a silicon based micro-hotplates without any photolithography process thanks to a low cost and reliable stencil mask process. Sub-ppm sensing (500 ppb) of NO2 gas at low temperature (50 °C) has been obtained with promising responses R/R0 up to 18. Micro-hotplates have been prepared using photolithographic process. The system is composed by a heating element and sensing electrodes. They are both integrated in membrane in order to have a localized heating and sensing spot onto which the sensitive thin film is deposited. The microhotplates can operate with low consumption and can heat up to 500 °C with a good stability. This system has been already published in [1]. The use of lift-off process to restrict the deposition of the thin film onto central electrodes can lead to the dissolution and/or contamination of the sensitive layer. That's why the photolithographic method was avoided and a stencil mask process was used.
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Dates et versions

hal-02192689 , version 1 (24-07-2019)

Identifiants

Citer

Lionel Presmanes, V Gunasekaran, Yohann Thimont, I Sinnarasa, Antoine Barnabe, et al.. Sub-ppm NO2 sensing in temperature cycled mode with Ga doped ZnO thin films deposited by RF sputtering. 8th GOSPEL Workshop Gas sensors based on semiconducting metal oxides: basic understanding & application fields, Vicenzo Guidi, Jun 2019, Ferrara, Italy. ⟨10.3390/proceedings2019014048⟩. ⟨hal-02192689⟩
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