Electrothermal Characterization of Double-Sided Cooling Si Power Module - LAAS - Laboratoire d'Analyse et d'Architecture des Systèmes
Communication Dans Un Congrès Année : 2019

Electrothermal Characterization of Double-Sided Cooling Si Power Module

Résumé

This paper presents an electrothermal characterization of a prototype double-sided cooling power module. The junction temperature T j is an important parameter of power devices. Different methods exist for junction temperature measurement. In this work, an electrical method based on temperature sensitive electrical parameter (TSEP) is conducted to estimate the junction temperature of the power module. A 3D thermal model was built to better comprehend thermal behavior within the module. A comparison between simulation and measurement results is performed and analyzed. Results have shown that 3D numerical modeling help understanding several manufacturing defects (soldering, sintering, die defaults, etc.).
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Dates et versions

hal-02613793 , version 1 (29-09-2021)

Identifiants

Citer

Sébastien Sanchez, Cong Tu Nguyen, Claudia Cadile, Jean-Pierre Fradin, Patrick Tounsi, et al.. Electrothermal Characterization of Double-Sided Cooling Si Power Module. ELECTRIMACS 2019, May 2019, Salerno, Italy. ⟨10.1007/978-3-030-37161-6_5⟩. ⟨hal-02613793⟩
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