Recessed and P-GaN regrowth gate development for normally-off AlGaN/GaN HEMTs - LAAS - Laboratoire d'Analyse et d'Architecture des Systèmes Accéder directement au contenu
Communication Dans Un Congrès Année : 2020

Recessed and P-GaN regrowth gate development for normally-off AlGaN/GaN HEMTs

Résumé

A new normally-off AlGaN/GaN HEMT structure is proposed. The regrowth of a P-GaN layer on the AlGaN/GaN heterostructure after the gate recess allows the achievement of the enhancement mode. A shift in the threshold voltage to positive values has been proved through simulation results. A precise control of the etch depth for the gate recess is detailed.
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Dates et versions

hal-02922723 , version 1 (01-09-2020)

Identifiants

  • HAL Id : hal-02922723 , version 1

Citer

Chaymaa Haloui, Toulon Gaëtan, Josiane Tasselli, Yvon Cordier, Éric Frayssinet, et al.. Recessed and P-GaN regrowth gate development for normally-off AlGaN/GaN HEMTs. 28 International Conference MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, Jun 2020, Wroclow, Poland. ⟨hal-02922723⟩
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