Communication Dans Un Congrès Année : 2020

Development of 1 eV InGaAsN PIN subcell for MJSC integration and space application

Inès Massiot
Chantal Fontaine
Guilhem Almuneau

Résumé

This paper reports on the optimization of 1eV dilute nitride solar cells growth conditions. InGaAsN cells were grown by MBE under different conditions (V/III ratio, substrate temperature, surfactant) and were processed without post-growth annealing. Characterization results suggest that the V/III ratio should be kept above 10 and that using Bi as a surfactant does not improve the cell performances. Our best InGaAsN cells exhibit Jsc and Voc values of 7.9 mA/cm 2 and 0.375 V respectively, under AM0> 870 nm and without ARC.

Fichier principal
Vignette du fichier
2020_abstract_LEVILLAYER_PVSC v5.pdf (420.55 Ko) Télécharger le fichier
Origine Fichiers produits par l'(les) auteur(s)
Licence

Dates et versions

hal-03012129 , version 1 (18-11-2020)

Licence

Identifiants

Citer

Maxime Levillayer, Sophie Duzellier, Hélène Carrère, Inès Massiot, Thierry Nuns, et al.. Development of 1 eV InGaAsN PIN subcell for MJSC integration and space application. 47th IEEE Photovoltaic Specialists Conference (PVSC 47), IEEE, Jun 2020, Calgary, Canada. ⟨10.1109/PVSC45281.2020.9300570⟩. ⟨hal-03012129⟩
295 Consultations
256 Téléchargements

Altmetric

Partager

  • More