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Conference Papers Year : 2021

Kinetic Monte Carlo for Process Simulation: First Principles Calibrated Parameters for BO 2

Abstract

The formation energies and diffusion paths of Oi, O2i and BO2 complex in silicon are determined using ab initio calculations and used to calibrate a Kinetic Monte Carlo. The aim is to simulate the formation of the BO2 complex in Technology Computer Aided Design tools.
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Dates and versions

hal-03366600 , version 1 (05-10-2021)

Identifiers

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Pierre-Louis Julliard, Antoine Jay, Miha Gunde, Nicolas Salles, Frederic Monsieur, et al.. Kinetic Monte Carlo for Process Simulation: First Principles Calibrated Parameters for BO 2. International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2021, Dallas, United States. pp.219-223, ⟨10.1109/SISPAD54002.2021.9592580⟩. ⟨hal-03366600⟩
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