Effect of thermal annealing on the dielectric, passivation and pH detection properties of aluminium oxide thin films deposited by plasma-enhanced atomic layer deposition - LAAS - Laboratoire d'Analyse et d'Architecture des Systèmes Access content directly
Journal Articles Thin Solid Films Year : 2021

Effect of thermal annealing on the dielectric, passivation and pH detection properties of aluminium oxide thin films deposited by plasma-enhanced atomic layer deposition

Abstract

The dielectric properties of aluminium oxide (Al2O3) thin films obtained by plasma-enhanced atomic layer deposition (PEALD) from Al(CH3)3/O2 precursors were investigated while focusing on the influences of thermal annealing under a dioxygen (O2) ambient. PEALD-Al2O3-based metalinsulator-silicon structures/capacitors and pH-sensitive chemical field effect transistors were fabricated to deal respectively with microelectronic applications and measurement in liquid phase. Antagonist results were thus evidenced. On the one hand, dealing with high-k gate materials, optimized dielectric properties, i.e. low fixed charge density (4 × 10 12 cm-2), high dielectric constant (r = 10.2), Fowler-Nordheim conduction and high breakdown electric fields (Ebd = 8.75 MV/cm) were obtained for polycrystalline PEALD Al2O3 films annealed at high temperature (T > 750°C). On the other hand, pH detection properties, i.e. quasi-Nernstian sensitivity (59 mV/pH), low drift (< 1 mV/day) and long lifetime (> 180 days), were optimized for unannealed amorphous PEALD Al2O3 films. These phenomena were associated germination/crystallization phenomena in the deposited amorphous alumina structure as well as to related charge trapping and leakage currents in water-based solutions related to the final Al2O3 polycrystalline structure.
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Dates and versions

hal-03380757 , version 1 (15-10-2021)

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Ahmet Lale, Matthieu Joly, Samir Mekkaoui, Xavier Joly, Emmanuel Scheid, et al.. Effect of thermal annealing on the dielectric, passivation and pH detection properties of aluminium oxide thin films deposited by plasma-enhanced atomic layer deposition. Thin Solid Films, 2021, 732, pp.138761. ⟨10.1016/j.tsf.2021.138761⟩. ⟨hal-03380757⟩
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