Driving of GaN HEMT - LAAS - Laboratoire d'Analyse et d'Architecture des Systèmes Accéder directement au contenu
Pré-Publication, Document De Travail Année : 2022

Driving of GaN HEMT

Résumé

Wide bandgap devices like High Electron Mobility Transistors (HEMT) are currently functional and sold worldwide. Their benefits are proven [1]. However, mechanisms are still to be fully understood: at the material scale with trapping effects [1], and at the command scale with the impact of routing and conception on waveforms, since these strongly impact the functioning and reliability of the device. To minimize these impacts, the driver is usually placed as close as possible to the component [2][3][4], which complicates not only measurements but also reliability studies, by rendering the behaviors of the driver and the component less separable. Hence, this paper deals with a simulated and experimentally demonstrated gate driver. The device allows the
Fichier sous embargo
Fichier sous embargo
0 7 8
Année Mois Jours
Avant la publication
vendredi 6 décembre 2024
Fichier sous embargo
vendredi 6 décembre 2024
Connectez-vous pour demander l'accès au fichier

Dates et versions

hal-03874986 , version 1 (06-12-2022)

Identifiants

  • HAL Id : hal-03874986 , version 1

Citer

Ludovic Roche, David Trémouilles, Emmanuel Marcault, Corinne Alonso. Driving of GaN HEMT. 2022. ⟨hal-03874986⟩
46 Consultations
4 Téléchargements

Partager

Gmail Facebook X LinkedIn More