Wide bandgap devices like High Electron Mobility Transistors (HEMT) are currently functional and sold worldwide. Their benefits are proven [1]. However, mechanisms are still to be fully understood: at the material scale with trapping effects [1], and at the command scale with the impact of routing and conception on waveforms, since these strongly impact the functioning and reliability of the device. To minimize these impacts, the driver is usually placed as close as possible to the component [2][3][4], which complicates not only measurements but also reliability studies, by rendering the behaviors of the driver and the component less separable. Hence, this paper deals with a simulated and experimentally demonstrated gate driver. The device allows the